a) low forward current carrying capacity
b) large reverse breakdown voltage
c) high ohmic junction resistance
d) high reverse recovery time
b) large reverse breakdown voltage
c) high ohmic junction resistance
d) high reverse recovery time
Answer: b
2. To make a signal diode suitable for high current & high voltage carrying applications with minimum losses, ________
a) a lightly doped n layer is grown between the two p & n layers
b) a heavily doped n layer is grown between the two p & n layers
c) a lightly doped p layer is grown between the two p & n layers
d) a heavily doped p layer is grown between the two p & n layers
2. To make a signal diode suitable for high current & high voltage carrying applications with minimum losses, ________
a) a lightly doped n layer is grown between the two p & n layers
b) a heavily doped n layer is grown between the two p & n layers
c) a lightly doped p layer is grown between the two p & n layers
d) a heavily doped p layer is grown between the two p & n layers
Answer: a
3. Power diode is __________
a) a three terminal semiconductor device
b) a two terminal semiconductor device
c) a four terminal semiconductor device
d) a three terminal analog device
3. Power diode is __________
a) a three terminal semiconductor device
b) a two terminal semiconductor device
c) a four terminal semiconductor device
d) a three terminal analog device
Answer: b
4. The V-I Characteristics of the diode lie in the
a) 1st & 2nd quadrant
b) 1st & 3rd quadrant
c) 1st & 4th quadrant
d) Only in the 1st quadrant
4. The V-I Characteristics of the diode lie in the
a) 1st & 2nd quadrant
b) 1st & 3rd quadrant
c) 1st & 4th quadrant
d) Only in the 1st quadrant
Answer: b
5. Which of the following is true in case of a power diode with R load?
a) I grows almost linearly with V
b) I decays almost linearly with V
c) I is independent of V
d) I initial grows than decays
5. Which of the following is true in case of a power diode with R load?
a) I grows almost linearly with V
b) I decays almost linearly with V
c) I is independent of V
d) I initial grows than decays
Answer: a
6. A diode is said to be reversed biased when the
a) cathode is positive with respect to the anode
b) anode is positive with respect to the cathode
c) cathode is negative with respect to the anode
d) both cathode & anode are negative
6. A diode is said to be reversed biased when the
a) cathode is positive with respect to the anode
b) anode is positive with respect to the cathode
c) cathode is negative with respect to the anode
d) both cathode & anode are negative
Answer: a
7. A diode is said to be forward biased when the
a) cathode is positive with respect to the anode
b) anode is positive with respect to the cathode
c) anode is negative with respect to the anode
d) both cathode & anode are positive
7. A diode is said to be forward biased when the
a) cathode is positive with respect to the anode
b) anode is positive with respect to the cathode
c) anode is negative with respect to the anode
d) both cathode & anode are positive
Answer: b
8. In case of an ideal power diode, the leakage current flows from
a) anode to cathode
b) cathode to anode
c) in both the directions
d) leakage current does not flow
8. In case of an ideal power diode, the leakage current flows from
a) anode to cathode
b) cathode to anode
c) in both the directions
d) leakage current does not flow
Answer: d
9. The peak inverse current IP for a power diode is given by the expression
a) IP=t + di/dt
b) IP=t * log i
c) IP=t * di/dt
d) IP=t * ∫ t*i dt
9. The peak inverse current IP for a power diode is given by the expression
a) IP=t + di/dt
b) IP=t * log i
c) IP=t * di/dt
d) IP=t * ∫ t*i dt
Answer: c
10. A power diode with small softness factor (S-factor) has
a) small oscillatory over voltages
b) large oscillatory over voltages
c) large peak reverse current
d) small peak reverse current
Answer: b10. A power diode with small softness factor (S-factor) has
a) small oscillatory over voltages
b) large oscillatory over voltages
c) large peak reverse current
d) small peak reverse current

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