POWER ELECTRONICS AND DRIVES PART 09

POWER ELECTRONICS AND DRIVES PART 09

1. IGBT possess
a) low input impedance
b) high input impedance
c) high on-state resistance
d) second breakdown problems
 

Answer: b
 
2. IGBT & BJT both posses ___
a) low on-state power losses
b) high on-state power losses
c) low switching losses
d) high input impedance
 

Answer: a
 
3. The three terminals of the IGBT are
a) base, emitter & collector
b) gate, source & drain
c) gate, emitter & collector
d) base, source & drain
 

Answer: c

4. In IGBT, the p+ layer connected to the collector terminal is called as the
a) drift layer
b) injection layer
c) body layer
d) collector Layer
 

Answer: b

5. The controlling parameter in IGBT is the
a) IG
b) VGE
c) IC
d) VCE
 

Answer: b
 
6. In IGBT, the n– layer above the p+ layer is called as the
a) drift layer
b) injection layer
c) body layer
d) collector Layer
 

Answer: a

7. The voltage blocking capability of the IGBT is determined by the
a) injection layer
b) body layer
c) metal used for the contacts
d) drift layer
 

Answer: d

8. The controlled parameter in IGBT is the
a) IG
b) VGE
c) IC
d) VCE
 

Answer: c

9. The structure of the IGBT is a
a) P-N-P structure connected by a MOS gate
b) N-N-P-P structure connected by a MOS gate
c) P-N-P-N structure connected by a MOS gate
d) N-P-N-P structure connected by a MOS gate
 

Answer: c

10. The major drawback of the first generation IGBTs was that, they had
a) latch-up problems
b) noise & secondary breakdown problems
c) sluggish operation
d) latch-up & secondary breakdown problems
 

Answer: d