POWER ELECTRONICS AND DRIVES PART 10

POWER ELECTRONICS AND DRIVES PART 10

1. When latch-up occurs in an IGBT
a) Ig is no longer controllable
b) Ic is no longer controllable
c) the device turns off
d) Ic increases to a very high value
 

Answer: b

2. A latched up IGBT can be turned off by
a) forced commutation of current
b) forced commutation of voltage
c) use of a snubber circuit
d) none of the mentioned
 

Answer: a
3. The static V-I curve of an IGBT is plotted with
a) Vce as the parameter
b) Ic as the parameter
c) Vge as the parameter
d) Ig as the parameter
 

Answer: c

4. Latch-up occurs in an IGBT when
a) Vce reaches a certain value
b) Ic reaches a certain value
c) Ig reaches a certain value
d) the device temperature reaches a certain value
 

Answer: b

5. In an IGBT, during the turn-on time
a) Vge decreases
b) Ic decreases
c) Vce decreases
d) none of the mentioned
 

Answer: c

6. Choose the correct statement
a) IGBTs have higher switching losses as compared to BJTs
b) IGBTs have secondary breakdown problems
c) IGBTs have lower gate drive requirements
d) IGBTs are current controlled devices
 

Answer: c

7. The approximate equivalent circuit of an IGBT consists of
a) a BJT & a MOSFET
b) a MOSFET & a MCT
c) two BJTs
d) two MOSFETs
 

Answer: a

8. An IGBT is also know as
a) MOIGT (Metal oxide insulated gate transistor)
b) COMFET (Conductively modulated FET)
c) GEMFET (Grain modulated FET)
d) all of the mentioned
 

Answer: d

9. The body of an IGBT consists of a
a) p-layer
b) n-layer
c) p-n layer
d) metal
 

Answer: a

10. At present, the state-of-the-art semiconductor devices are begin manufactured using
a) Semiconducting Diamond
b) Gallium-Arsenide
c) Germanium
d) Silicon-Carbide
 

Answer: d